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ISSN: 1524-5845 Print
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DOI: 10.1615/IntJCompCivStructEng.v1.i2
Pages: 104
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DOI: 10.1615/IntJCompCivStructEng.v1.i2.60
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Article price - $35.00 |
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MODELING OF STRAINED STATE IN LARGE DIAMETER SILICON WAFERS MOUNTED ON THREE PINS
M. V. Mezhennyi
Senior researcher, State Institute of Rare Metals, Russia
M.G. Mil'vidskii
Head of Laboratory, State Institute of Rare Metals, Russia
A.I. Prostomolotov
Senior researcher, Institute problem of mechanical, Russia
ABSTRACT
A three-dimensional (3D) problem for calculations of elastic stresses and deformations in 200 and 300 mm diameter silicon wafers was formulated and solved using an iso-tropic approximation. The strained state was investigated in the wafers that were horizontally supported on three symmetrically placed pins. The effects of gravity and heating were investigated. Stresses for all possible glide planes were calculated. It was shown that, for 300 mm diameter wafers, gravity gives a main contribution in elastic stresses even for radial temperature differences between a wafer's center and its edge up to 5 K. This temperature difference in a 200 mm diameter wafers is more essential. However, for smaller temperature differences, the contribution of thermal stresses may also be neglected for 200 mm diameter wafers.
pages 61-71
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