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International Journal for Computational Civil and Structural Engineering

 

ISSN for PRINT: 1524-5845

Institutional price:

$604.00

Issues per year:

4

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2005, Volume1

Issue 2

  104 pages  

DOI: 10.1615/IntJCompCivStructEng.v1.i2   

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  • MODELING OF STRAINED STATE IN LARGE DIAMETER SILICON WAFERS MOUNTED ON THREE PINS
  • M. V. Mezhennyi
    Senior researcher, State Institute of Rare Metals, Russia

    M.G. Mil'vidskii
    Head of Laboratory, State Institute of Rare Metals, Russia

    A.I. Prostomolotov
    Senior researcher, Institute problem of mechanical, Russia


    ABSTRACT

    A three-dimensional (3D) problem for calculations of elastic stresses and deformations in 200 and 300 mm diameter silicon wafers was formulated and solved using an iso-tropic approximation. The strained state was investigated in the wafers that were horizontally supported on three symmetrically placed pins. The effects of gravity and heating were investigated. Stresses for all possible glide planes were calculated. It was shown that, for 300 mm diameter wafers, gravity gives a main contribution in elastic stresses even for radial temperature differences between a wafer's center and its edge up to 5 K. This temperature difference in a 200 mm diameter wafers is more essential. However, for smaller temperature differences, the contribution of thermal stresses may also be neglected for 200 mm diameter wafers.

    DOI: 10.1615/IntJCompCivStructEng.v1.i2.60

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