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Annual Reviews of Heat Transfer

ISSN 1049-0787

Individual price:

$175.00 (Must be sent to your home address)

You can order single issue or individual article. To purchase a single issue or an individual article as well as to view tables of contents and abstracts click on issue number.

Institutional price:

$349.00

Volumes per year:

various

Year 2002

392 pages

Volume price - $141.00

CONVECTIVE MASS TRANSPORT DURING BULK GROWTH OF SEMICONDUCTOR CRYSTALS WITH STEADY MAGNETIC FIELDS

John S. Walker
Department of Mechanical and Industrial Engineering College of Engineering, 140 Mechanical Engineering Building, MC-244, 1206 West Green Street, Urbana, IL 61801

Nancy Ma
Dept. of Mechanical & Aerospace Engineering, North Carolina State University, Campus Box 7910, Rayleigh, NC 27695

ABSTRACT

During a bulk-growth process, a single crystal is grown by the slow solidification from a body of molten semiconductor, or melt. Since most molten semiconductors have large electrical conductivities, a magnetic field can be used to suppress deleterious hydrodynamic instabilities and to tailor the laminar melt motion during crystal growth. A primary goal is to tailor the convective mass transport of dopants and species in the melt in order to produce crystals with uniform compositions. The optimal magnetic field depends on the process and on the type of semiconductor. This paper reviews: (1) the development of oxygen-transport control in the growth of large-diameter silicon crystals by the Czochralski process; (2) the use of magnetic fields to improve the quality of bulk-grown crystals of compound semiconductors, such as gallium-arsenide and indiumphosphide; (3) the benefits of magnetic fields for the floating zone growth of high-purity, dislocation-free silicon crystals; (4) the thermoelectromagnetic convection arising from the application of a magnetic field; and (5) the benefits of very strong magnetic fields for solid-solution crystals grown by the vertical Bridgman process.