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Annual Reviews of Heat Transfer

ISSN 1049-0787

Individual price:

$175.00 (Must be sent to your home address)

You can order single issue or individual article. To purchase a single issue or an individual article as well as to view tables of contents and abstracts click on issue number.

Institutional price:

$349.00

Volumes per year:

various

Year 2002

392 pages

Volume price - $141.00

CONVECTIVE INSTABILITY IN CRYSTAL GROWTH SYSTEM

Nobuyuki Imaishi
Institute of Advanced Materials Study Kyushu University 6-1, Kasuga-Koen, Kasuga Fukuoka 816-8580, Japan

Koichi Kakimoto
Institute of Advanced Materials Study Kyushu University 6-1, Kasuga-Koen, Kasuga Fukuoka 816-8580, Japan

ABSTRACT

The heat and mass transfer in semiconductor, or oxide melts, significantly affect the quality - such as defects and impurity concentrations - of large crystals grown from the melts. This paper reviews the current understanding of convection of the melts, starting from the results of visualization using silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. Moreover, this paper reviews instability analysis of flow of the melts. The characteristics of flow of silicon and oxides are reviewed by focusing on the Coriolis force in the rotating melt. Based on geostrophic hydrodynamics, the origin of the flow structure is reviewed, and it is discussed whether flow is completely turbulent or has an ordered structure. Flow instability based on magnetic fields, is also reviewed. Moreover, convective instability of oxide melts is reviewed from the point of view of surface-tension-driven flow and magnetic field effect.