Annals of the Assembly for International Heat Transfer Conference 13

ISBN 1-56700-225-0 / CD 1-56700-226-9

Year 2006

I.-T. Im
Iksan National College, Iksan, Republic of Korea

H. Song
The University of Tokyo, Tokyo, Japan

M. Sugiyama
The University of Tokyo, Tokyo, Japan

Y. Shimogaki
The University of Tokyo, Tokyo, Japan

Y. Nakano
The University of Tokyo, Tokyo, Japan

K.-S. Kim
Korea University of Technology and Education, Choongnam, Republic of Korea

Woo-Seung Kim
Department of Mechanical Engineering, Hanyang University, 1271 Sa-1 dong, Sangnok-gu, Ansan, Kyeonggi-do, 425-791, Korea

Film growth rate profiles of GaAs MOVPE process were analyzed using computational fluid dynamics method as a successive work of the multi-scale analysis, which combined the micro-scale analysis using a selective-area method and the reactor-scale macro analysis. The film growth process in a horizontal reactor using trimethylgallium (TMGa) and tertiarybutylarsine was considered. Film growth rate profiles according to the various susceptor temperatures and total flow rates were predicted and analyzed to elucidate the responsible species for the film growth. The results show that the monomethylgallium is the major route for the film deposition but the deposition from the TMGa is important in the upstream region of the reactor.

MPR-07 pages DOI: 10.1615/IHTC13.p11.70 Download article

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