Annals of the Assembly for International Heat Transfer Conference 13

ISBN 1-56700-225-0 / CD 1-56700-226-9

Year 2006

P. George
Rutgers, The State University of New Jersey, Piscataway, USA

Yogesh Jaluria
Rutgers University

H. C. Gea
Rutgers, The State University of New Jersey, Piscataway, USA

This paper considers the simulation and optimization of the chemical vapor deposition (CVD) process for material fabrication, focusing on the rate of deposition and on the quality of the thin film obtained. The level of quality needed depends on the intended application, with electronic and optical materials imposing the most stringent demands. Large area film thickness and composition uniformity are achieved by proper control of the governing transport processes. A vertical impinging CVD reactor in which the heated susceptor is positioned perpendicular to the downward flow is considered. Silicon deposition from silane is considered. The focus is on optimizing the system and the transport processes, including chemical reactions and mass transfer that govern the deposition. Numerical simulation is used to determine the effects of important design parameters and operating conditions on the deposition rate and film characteristics. Using response surfaces, the study models the process over a range of susceptor temperature and inlet velocity of the reaction gases. The process is then optimized.

MPR-06 pages DOI: 10.1615/IHTC13.p11.60 Download article

Article price - $35.00

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