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O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
Obtenha mais informações sobre o autor no Diretório de especialistas
Articles
Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes
Vol. 52 '1998
-
Telecommunications and Radio Engineering
Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Tunnel
n
+
-D- n
+
Cathode for Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity
Vol. 61 '2004
-
Telecommunications and Radio Engineering
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
Vol. 63 '2005
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES
Vol. 69 '2010
-
Telecommunications and Radio Engineering
NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE
Vol. 70 '2011
-
Telecommunications and Radio Engineering
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs
Vol. 72 '2013
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY
Vol. 74 '2015
-
Telecommunications and Radio Engineering
HETEROSTRUCTURE-BASED DIODE WITH CATHODE STATIC DOMAIN
Vol. 76 '2017
-
Telecommunications and Radio Engineering
IMPACT IONIZATION IN SHORT Al
Z
Ga
1-Z
N-BASED DIODES
Vol. 76 '2017
-
Telecommunications and Radio Engineering
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