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V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
Больше информации об авторе - в Directory of Specialists
Articles
Boundary Estimation of Ballistic Transport in the GaAs Devices with Submicron Dimensions
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Current Characteristics of Heterogeneous Conducting Microstructures of Integrated Circuits on Exposure to Electromagnetic Fields
Vol. 57 '2002
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Telecommunications and Radio Engineering
Effect of Heterogeneity Parameters of Conducting Microstructures of Integrated Circuits on the Wunsch-Bell Curve
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Impact of High-Power Pulse Fields on Biological Objects and Media
Vol. 57 '2002
-
Telecommunications and Radio Engineering
The Influence of Powerful Pulse Electromagnetic Fields on Biological Objects and Media
Vol. 57 '2002
-
Telecommunications and Radio Engineering
A Calculation Model for Submicron Field-Effect Transistors Based on GaAs
Vol. 58 '2002
-
Telecommunications and Radio Engineering
The Development and Investigation of a Numerical Dynamic Model of Vacuum-Tube Devices
Vol. 58 '2002
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Telecommunications and Radio Engineering
An Influence of Heat Processes on the Drift Characteristics of Semiconductor Structures
Vol. 59 '2003
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Telecommunications and Radio Engineering
Diffraction of Electromagnetic Waves by an Integrated-Circuit Model in a Waveguide
Vol. 61 '2004
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Telecommunications and Radio Engineering
Avalanche Features in Silicon Schottky-FETs in Accordance with Numerical Simulation Results
Vol. 65 '2006
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Telecommunications and Radio Engineering
Influence of Pulse Electromagnetic Fields on Current-Technology Microcontrollers
Vol. 66 '2007
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Telecommunications and Radio Engineering
Influence of Pulse Electromagnetic Fields on Integrated Memory Chips
Vol. 66 '2007
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Telecommunications and Radio Engineering
Influence of Heterogeneity of the Active Region of the MESFET on the Criterial Wunsch-Bell Dependence
Vol. 67 '2008
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Telecommunications and Radio Engineering
Numerical Simulation of Avalanche Breakdown in the GaAs MESFET
Vol. 67 '2008
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Telecommunications and Radio Engineering
IRREVERSIBLE PROCESSES IN CONDUCTING FILMS OF METAL-DIELECTRIC STRUCTURES SUBJECTED TO THE INFLUENCE OF STRONG ELECTROMAGNETIC FIELDS
Vol. 71 '2012
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Telecommunications and Radio Engineering
EXPERIMENTAL RESEARCH OF DIFFRACTION PROPERTIES OF THIN CONDUCTING FILMS IN A WAVEGUIDE
Vol. 73 '2014
-
Telecommunications and Radio Engineering
SELECTION OF KINETIC PARAMETERS FOR THE TRANSFER CURRENT IN GaAs
Vol. 73 '2014
-
Telecommunications and Radio Engineering
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