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Vladimir M. Maslovsky
Department of Micro- and Nanoelectronics, Moscow Institute of Physics and Technology (State University), 9 Institutskii Lane, Dolgoprudnyi, Moscow Region, 141700 Russia
Get more info about author from Directory of Specialists
Articles
HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM
Vol. 23 '2019
-
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO
2
FILMS DOPED WITH PHOSPHORUS
Vol. 23 '2019
-
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SIMULATION OF ANNEALING AND THE ELDRS IN p-MNOS RadFETs
Vol. 23 '2019
-
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
INTRINSIC GETTERING IN SILICON SUBSTRATE OF MOS STRUCTURES UNDER COMBINED INFLUENCE OF RADIATION AND PULSED MAGNETIC FIELDS
Vol. 24 '2020
-
High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
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