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Progress in Plasma Processing of Materials, 1999

ISBN 打印: 1-56700-126-2

PROPERTIES AND CHARACTERISATION OF PHOTOVOLTAIC SILICON LAYERS OBTAINED BY RF THERMAL PLASMA SPRAYING PROCESS

Abstract

The deposit of silicon layer by plasma has been characterized by using SEM, EDX analysis, SIMS, XPS in order to explain the composition and the overall properties of the silicon layers for photovoltaic applications. Characterization of silicon deposits has been performed by the hydrogen rate analysis using exodiffusion method. Finally, the on-line diagnostics of the plasma used was: Laser Doppler Anemometry (LDA), Laser Doppler Granulometry (LDG) in order to qualify the process of deposit.
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