A novel sputtering method based on a triode-sputtering set-up is presented. This low vacuum plasma method enables sputtering of thin films at a pressure range of: 0. 2−5 mTorr, using a gas discharge support. The new method is capable of independent control of the sputtering rate vs. sputtering voltage.
Temperature distribution of electrons in the plasma was experimentally studied using the Langmuir probe. Electron temperature was found to be maximal along the plasma plane. Experimental sputtering results of Ti, Si layers, using this method, are described. Obtained sputtering rates for Ti and Si were 60 A°/min and 100 A°/min respectively.