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Autoren, Herausgeber und Rezensenten von Begell House
Autoren, Herausgeber und Rezensenten von Begell House
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Für Rezensenten
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
Weitere Infos über den Autor erhalten Sie im Expertenverzeichnis
Articles
Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes
Vol. 52 '1998
-
Telecommunications and Radio Engineering
Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Tunnel
n
+
-D- n
+
Cathode for Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity
Vol. 61 '2004
-
Telecommunications and Radio Engineering
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
Vol. 63 '2005
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES
Vol. 69 '2010
-
Telecommunications and Radio Engineering
NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE
Vol. 70 '2011
-
Telecommunications and Radio Engineering
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs
Vol. 72 '2013
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY
Vol. 74 '2015
-
Telecommunications and Radio Engineering
HETEROSTRUCTURE-BASED DIODE WITH CATHODE STATIC DOMAIN
Vol. 76 '2017
-
Telecommunications and Radio Engineering
IMPACT IONIZATION IN SHORT Al
Z
Ga
1-Z
N-BASED DIODES
Vol. 76 '2017
-
Telecommunications and Radio Engineering
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