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Progress in Plasma Processing of Materials, 1999

ISBN Druckformat: 1-56700-126-2

POSSIBILITY OF COMPOSITE SILICON NITRIDE + SILICON CARBIDE (Si3N4 _ SiC) POWDER PRODUCTION IN THERMAL PLASMA

Abstrakt

The results of equilibrium composition computation and total (including heat of formation) enthalpy calculation, in the temperature range of 1000 to 6000 K and at pressure of 1 bar, for the Si-C-H-N system are presented in the paper. These data enable the determination and optimization of mass, temperature and energy parameters of the powder production process of composite silicone nitride + silicone carbide (Si3N4 _ SiC) by silicon powder evaporation in nitrogen plasma, followed by reactive quenching with cold methane. The way of using the system enthalpy - temperature interdependence for the prediction of temperature mass and energy parameters of the process, has been illustrated on the presented example.
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