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Transport Phenomena in Thermal Engineering. Volume 2

ISBN Print: 1-56700-015-0

ANNEALING OF SEMICONDUCTOR FILMS BY A MOVING LASER BEAM

Abstract

The rapid melting of silicon film due to the absorption of a CW laser beam radiation has been studied. The enthalpy technique for the solution of phase change problems has been used in an explicit finite difference form to calculate the transient temperature distribution in the silicon film and the substrate and the growth rate of the melt pool.The technique has been modified so that it is not necessary to assign a constant temperature, Tm , to the mesh element that contains the melt melt pool with the reasonab1e front.The results for the size have been compared experimental data and agreement has been obtained.
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