The home for science and engineering™
English
中文
Русский
日本語
Português
Deutsch
Français
Español
Prices and Subscription Policies
About Begell House
Contact Us
Customer Login
0
Shopping Cart
Search box
Search
Home
Books
eBooks
Journals
References and Proceedings
Authors, Editors, Reviewers
A-Z Product Index
Find Journals
Home
Begell House Authors, Editors and Reviewers
Begell House Authors, Editors and Reviewers
Menu
For Authors
For Editors
For Reviewers
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
Get more info about author from Directory of Specialists
Articles
Analysis of Stochastic Current Oscillations in GaAs:Cr-Based Diodes
Vol. 52 '1998
-
Telecommunications and Radio Engineering
Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Special Features of a Joint Operation of the Resonant-Tunnel Diode and Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Tunnel
n
+
-D- n
+
Cathode for Gunn Diode
Vol. 58 '2002
-
Telecommunications and Radio Engineering
Joint Operation of Two-Level Resonant Tunnelling and Gunn Diodes
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Impedance Characteristics of Diodes Operating Jointly and Having Negative Differential Conductivity
Vol. 61 '2004
-
Telecommunications and Radio Engineering
Two-Level Resonant-Tunneling Diodes with Tunneling Anodes
Vol. 63 '2005
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
HARMONIC GENERATION AND FREQUENCY MULTIPLICATION CAUSED BY THE IMPACT IONIZATION IN GaN-DIODES
Vol. 69 '2010
-
Telecommunications and Radio Engineering
NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE
Vol. 70 '2011
-
Telecommunications and Radio Engineering
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs
Vol. 72 '2013
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF PLANAR DIODE WITH TUNNEL ANODE AND TUNNEL LATERAL BOUNDARY
Vol. 74 '2015
-
Telecommunications and Radio Engineering
HETEROSTRUCTURE-BASED DIODE WITH CATHODE STATIC DOMAIN
Vol. 76 '2017
-
Telecommunications and Radio Engineering
IMPACT IONIZATION IN SHORT Al
Z
Ga
1-Z
N-BASED DIODES
Vol. 76 '2017
-
Telecommunications and Radio Engineering
Home
Begell Digital Portal
Begell Digital Library
Journals
Books
eBooks
References and Proceedings
Authors, Editors, Reviewers
A-Z Product Index
Find Journals
Prices and Subscription Policies
About Begell House
Contact Us
Language
English
中文
Русский
日本語
Português
Deutsch
Français
Español