The equipment for ion-plasma sputter deposition of metal, semiconductor and dielectric materials in Ar discharge, at work pressure of 5 10−4 Torr has been designed and built. It has been shown that RF bias on the substrate allows to control thin films growth process due to directed Ar ion bombardment. This method makes it possible to fabricate more dense films with different structures (from amorphous up to epitaxial), and also to perform growing together film with substrate. We used additional net-electrode near target for enhancing of homogeneity of target sputtering and thickness of the film. The composition of atmosphere into the work chamber was studied by mass-spectrometry. High level of ionization of target material atoms in the process of sputter deposition has been revealed. We investigated the processes of fabricating of different films: amorphous magnetic films, ultra-thin metal films, high textured and epitaxial films of dielectrics and semiconductors with use of plasma stimulation. Optimal parameters of the process for fabricating of stable films have been determined.