Plasma deposition process of metallurgical grade silicon powders was used in order to combine purification and deposition processes onto different kinds of substrate with a high deposition rate (~ 100 µm.mn−1). The particles are heated, melted, partially vaporised and finally deposited on a substrate. Under optimised experimental conditions dense deposits are obtained on ceramic substrate with a thickness close to 1 mm. Except the final crystallised zone, EDX and ICP analysis show that the deposits have good purity. However, because of a fast crystallisation, several crystalline defects have been observed. Introduction of hydrogen was used in order to passive this defects and to increase the photovoltaic properties.