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Begell Houseの著者、編集者及びレビュー者
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Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
スペシャリストのディレクトリから著者に関する詳細情報を取得する
Articles
Peculiar Features of Electrical and Photoelectric Properties of Electromagnetic (EM) Radiation Barrier Detectors Based on p-Zn
x
Cd
1−x
Te
Crystals
Vol. 55 '2001
-
Telecommunications and Radio Engineering
Properties of Photoconverters with Active Layer of Cadmium Telluride Containing an lsovalent Impurity of Oxygen
Vol. 55 '2001
-
Telecommunications and Radio Engineering
The Mechanisms Forming Photoelectrical Properties of
p
-GaSe-
n
-InSe Heterojunction
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Photodetectors Based on the Gallium Phosphide-Arsenide Heterojunctions Produced by Isovalent Substitution Method
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Defect Formation Mechanisms for ZnSe with Isovalent Oxygen Impurity
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Electrical Properties of Surface-Barrier Diodes Based on the CdTe Crystals with Modified Surface
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Mechanisms of Defect Formation for ZnSe with Isovalent Oxygen Impurity
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Formation and Properties of n-CdO/p-CdTe Heterojunction
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Electrophysical Properties of Zinc Selenide Diffusion Layers Doped with 3-D Elements from the Vapor Phase
Vol. 68 '2009
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF ZnSe:V CRYSTALS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN
Vol. 71 '2012
-
Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF CdSe HETEROLAYERS WITH ISOVALENT TELLYRIUM IMPURITY
Vol. 72 '2013
-
Telecommunications and Radio Engineering
PHYSICAL PROPERTIES OF ZnSe HETEROLAYERS OBTAINED BY IZOVALENT SUBSTITUTION
Vol. 72 '2013
-
Telecommunications and Radio Engineering
THE INFLUENCE OF THE SYNTHESIS CONDITIONS ON LUMINESCENT PROPERTIES OF ZNO HETEROLAYERS
Vol. 72 '2013
-
Telecommunications and Radio Engineering
α-CdTe LAYERS: GROWING AND OPTICAL PROPERTIES
Vol. 73 '2014
-
Telecommunications and Radio Engineering
PECULIARITIES OF THE OPTICAL PROPERTIES OF WIDE-GAP II-VI COMPOUNDS WITH Mg ISOVALENT IMPURITY
Vol. 73 '2014
-
Telecommunications and Radio Engineering
"PURIFICATION EFFECTS" IN ZINC SELENIDE CRYSTALS DOPED WITH YTTERBIUM FROM VAPOR PHASE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
IMPROVEMENT IN OPTICAL BAND GAP DETERMINATION FOR CADMIUM TELLURIDE AND RELATED COMPOUNDS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF Cd
0.55
Mn
0.45
Te FILMS WITH NANO-SCALE SURFACE FORMATIONS
Vol. 76 '2017
-
Telecommunications and Radio Engineering
SURFACE-BARRIER UV DETECTORS BASED ON WIDE BANDGAP SEMICONDUCTORS
Vol. 77 '2018
-
Telecommunications and Radio Engineering
γ-IRRADIATION INFLUENCE ON THE URBACH RULE CRITERIA IN ZnSe<Te> CRYSTALS
Vol. 78 '2019
-
Telecommunications and Radio Engineering
DEFECT FORMATION MECHANISMS OF ZINC SELENIDE LAYERS DOPED BY ISOVALENT IMPURITIES OF THE II GROUP
Vol. 78 '2019
-
Telecommunications and Radio Engineering
OPTICAL PROPERTIES OF CDS HETEROLAYERS RECEIVED BY ISOVALENT SUBSTITUTION ON B-ZNS SUBSTRATES
Vol. 78 '2019
-
Telecommunications and Radio Engineering
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