ホーム 書籍 電子書籍 ジャーナル 参考文献と会報 著者、編集者、レビュー者 A-Z商品インデックス 各受賞
Progress in Plasma Processing of Materials, 1999

ISBN:
1-56700-126-2 (印刷)

PROPERTIES AND CHARACTERISATION OF PHOTOVOLTAIC SILICON LAYERS OBTAINED BY RF THERMAL PLASMA SPRAYING PROCESS

F. Krayem
ENSCP-UPMC Laboratory of plasma processing and surface treatment 11, rue Pierre et Marie Curie 75005 Paris - France

Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France

要約

The deposit of silicon layer by plasma has been characterized by using SEM, EDX analysis, SIMS, XPS in order to explain the composition and the overall properties of the silicon layers for photovoltaic applications. Characterization of silicon deposits has been performed by the hydrogen rate analysis using exodiffusion method. Finally, the on-line diagnostics of the plasma used was: Laser Doppler Anemometry (LDA), Laser Doppler Granulometry (LDG) in order to qualify the process of deposit.