THERMAL CONDUCTIVITY OF DOPED POLYSILICON LAYERS

McConnell, A. D.; Uma, S.; Goodson, Kenneth  E.

Heat Transfer & Transport Phenomena in Microscale

ISBN 印刷: 1-56700-150-5

THERMAL CONDUCTIVITY OF DOPED POLYSILICON LAYERS

A. D. McConnell Stanford University, Department of Mechanical Engineering, Bldg. 530, 440 Escondido Mall, Stanford, CA 94305-3030

S. Uma Dept, of Mechanical Engineering, Stanford University, Stanford, CA 94305-3030, USA

Kenneth E. Goodson Thermosciences Division, Mechanical Engineering Department, Stanford University Bldg. 530, 440 Escondido Mall, Stanford, CA 94305-3030, USA

要約

Polycrystalline silicon is common in microdevices for which thermal design is important. This study measures the lateral thermal conductivity of a boron-doped polysilicon layer at temperatures ranging from 20 to 320 K. The polysilicon layer is 1 µm thick with a doping concentration of l×lO¹⁹ cm^-3, and the measurements are performed using electrical-resistance thermometry in a suspended membrane structure. The room temperature thermal conductivity of the doped polysilicon layer is 45.3 W/m K, which is nearly an order of magnitude lower than that for a single-crystal silicon layer with the same dopant concentration. Phonon transport modeling and AFM grain size measurements suggest that annealing in this sample strongly reduces the importance of grain-boundary scattering.

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