The rapid melting of silicon film due to the absorption of a CW laser beam radiation has been studied. The enthalpy technique for the solution of phase change problems has been used in an explicit finite difference form to
calculate the transient temperature distribution in the silicon film and the substrate and the growth rate of
the melt pool.The technique has been modified so that it is not necessary to assign a constant temperature, Tm , to the mesh element that contains the melt
melt pool with the reasonab1e front.The results for the
size have been compared experimental data and agreement has been obtained.