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P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine
Obtenha mais informações sobre o autor no Diretório de especialistas
Articles
A Modified Counter-Sweep Method
Vol. 53 '1999
-
Telecommunications and Radio Engineering
Numerical Analysis of Semiconducting Structures with an Abrupt
p − n
Junction
Vol. 53 '1999
-
Telecommunications and Radio Engineering
Modeling the Internal Amplification of Current Pulses in Reverse-Biased PNIPN Semiconducting Structures
Vol. 55 '2001
-
Telecommunications and Radio Engineering
Electrostatic Fields in Reverse-Biased
pn - i -pn
Structures
Vol. 60 '2003
-
Telecommunications and Radio Engineering
Method of Calculation of Avalanche
p−n
Junction in Self-Excited Mode
Vol. 64 '2005
-
Telecommunications and Radio Engineering
Pulse Photo multiplier Simulation Based on the pn-i-pn Structure with Avalanche p-n Junction Barriers
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Avalanche-Cascade Amplification of Pulses in
pn-i-pn
Structures with Reverse-Biased
p-n
Junctions
Vol. 68 '2009
-
Telecommunications and Radio Engineering
A SOLUTION ALGORITHM FOR THE DRIFT-DIFFUSION MODEL EQUATIONS OF SEMICONDUCTING STRUCTURES WITH AVALANCHE
p - n
JUNCTIONS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
MODEL MICROWAVE MIXERS BASED ON ABRUPT
p−n
JUNCTIONS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
SELF-EXCITED OSCILLATIONS IN ABRUPT
p - n
JUNCTIONS WITH A FIXED REVERSE BIAS
Vol. 69 '2010
-
Telecommunications and Radio Engineering
COHERENT POWER COMBINING IN AVALANCHE-OSCILLATOR DIODES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
FREQUENCY CONVERSION IN
pn-i-pn
STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
POWER CHARACTERISTICS OF MILLIMETRIC AND SUBMILLIMETRIC OSCILLATORS BASED ON THE ABRUPT
p-n
-JUNCTTONS
Vol. 72 '2013
-
Telecommunications and Radio Engineering
POWER CHARACTERISTICS OF MULTIFREQUENCY MILLIMETER AND SUBMILLIMETER WAVE SELF-OSCILLATORS BASED ON THE
pn-i-pn
STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
DOUBLE SPLITTING OF MULTIPLICATION LAYER IN AVALANCHE GENERATOR DIODES AND GENERATION OF TWO-FREQUENCY SELF-EXCITED OSCILLATIONS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
DYNAMICS OF DUAL-FREQUENCY AVALANCHE-GENERATOR DIODES IN MICROWAVE RANGE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
OPERATING MODES OF MICROWAVE AVALANCHE-OSCILLATOR DIODES
Vol. 75 '2016
-
Telecommunications and Radio Engineering
VOLT-AMPERE CHARACTERISTIC AND EXTERNAL INDUCED CURRENT IN AVALANCHE-GENERATOR DIODES WITH REVERSE-BIASED ABRUPT JUNCTIONS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
SYNCHRONOUS GENERATION OF TWO OSCILLATIONS OF MICROWAVE AND TERAHERTZ BANDS IN AVALANCHE-GENERATOR DIODES WITH EXTERNAL SIGNAL
Vol. 76 '2017
-
Telecommunications and Radio Engineering
SCENARIO FOR TRANSITION TO CHAOS THROUGH INTERMITTENCY IN AVALANCHE GENERATOR DIODES WITH AN EXTERNAL SIGNAL
Vol. 77 '2018
-
Telecommunications and Radio Engineering
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