Progress in Plasma Processing of Materials, 2003
ISBN Print: 978-1-56700-192-1
ISBN Online: 978-1-56700-447-2
PURIFICATION AND HYDROGENATION OF METALLURGICAL SILICON POWDER BY RF THERMAL PLASMA. CHARACTERIZATION OF THE DEPOSIT.
DOI: 10.1615/ITPPC-2002.870
pages 731-736
Resumo
Plasma deposition process of metallurgical grade silicon powders was used in order to combine purification and deposition processes onto different kinds of substrate with a high deposition rate (~ 100 µm.mn−1). The particles are heated, melted, partially vaporised and finally deposited on a substrate. Under optimised experimental conditions dense deposits are obtained on ceramic substrate with a thickness close to 1 mm. Except the final crystallised zone, EDX and ICP analysis show that the deposits have good purity. However, because of a fast crystallisation, several crystalline defects have been observed. Introduction of hydrogen was used in order to passive this defects and to increase the photovoltaic properties.
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