CALCULATION OF SILICON PARTICLES DYNAMICS, HEAT AND MASS TRANSFERS IN THERMAL PLASMAS. EFFECT OF PARTICLES VAPORIZATION

In this paper there were calculated the motion and the heating of a silicon particle in the RF ICP torch which is used in the Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces (Universite P. et M. Curie, France) for powder treatment and which works at the frequency of 5 MHz, the plasma power being 10 kW.
The model for the particle heating takes into account the following processes: the particle heating, its melting, vaporization (including losses of energy by vaporization and heating of the vapor cloud) and evaporation (boiling). The temperature inside the particle is supposed uniform.
A new way of correction of the vaporization calculation is proposed. In order to evaluate the effect of the particle vaporization on the particle heating, several variants were calculated: without vaporization and with vaporization calculated by different equations.
The way of vaporization calculation was chosen on the basis of comparison between calculations and experimental data.