Login do cliente 0 Carrinho de compras
Início Livros eBooks Revistas Referências e Anais Autores, editores, revisores Índice de produtos de A a Z
Progress in Plasma Processing of Materials, 1999

ISBN Imprimir: 1-56700-126-2

DEPOSITION OF THIN-FILM SILICON FOR PHOTOVOLTAICS: USE OF VHF-GD AND OES

Resumo

Deposition rates over 10 A/s can be obtained for device-grade microcrystalline silicon with the VHF-GD (Very High Frequency - Glow Discharge) method, as applied to hydrogen-diluted silane plasmas. The morphological phase transition from amorphous to microcrystalline silicon can be controlled by varying e.g. the applied VHF-power or the dilution level. The glow of the plasma associated with this morphological phase transition is monitored by optical emission spectroscopy (OES). Thereby, we find that the decisive criteria for µc-Si:H growth is the OES-ratio between the Hα-line (atomic hydrogen line at 656nm) and the SiH* - line (at 414 nm); in our case, as soon as this ratio becomes lower than 1.7 one obtains microcrystalline growth.
Início Portal Digital Begell Biblioteca digital da Begell Revistas Livros eBooks Referências e Anais Autores, editores, revisores Índice de produtos de A a Z Políticas de preços e assinaturas Sobre a Begell House Contato Language English 中文 Русский 日本語 Português Deutsch Français Español