Login do cliente 0 Carrinho de compras
Início Livros eBooks Revistas Referências e Anais Autores, editores, revisores Índice de produtos de A a Z
Transport Phenomena in Thermal Engineering. Volume 2

ISBN Imprimir: 1-56700-015-0

ANNEALING OF SEMICONDUCTOR FILMS BY A MOVING LASER BEAM

Resumo

The rapid melting of silicon film due to the absorption of a CW laser beam radiation has been studied. The enthalpy technique for the solution of phase change problems has been used in an explicit finite difference form to calculate the transient temperature distribution in the silicon film and the substrate and the growth rate of the melt pool.The technique has been modified so that it is not necessary to assign a constant temperature, Tm , to the mesh element that contains the melt melt pool with the reasonab1e front.The results for the size have been compared experimental data and agreement has been obtained.
Início Portal Digital Begell Biblioteca digital da Begell Revistas Livros eBooks Referências e Anais Autores, editores, revisores Índice de produtos de A a Z Políticas de preços e assinaturas Sobre a Begell House Contato Language English 中文 Русский 日本語 Português Deutsch Français Español