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Progress in Plasma Processing of Materials, 1999

ISBN Print: 1-56700-126-2

AMORPHOUS SILICON THIN FILMS FOR SOLAR CELLS FROM PLASMA PROCESSES

Аннотация

In a plasma enhanced chemical vapor deposition (PECVD) in an inductively coupled plasma, at low pressure (< 1000 Pa) amorphous silicon (a - Si) was deposited on ITO substrates from SiCI4 + H2 and SiH4 gases in Ar mixtures.
In the plasma bulk the reaction kinetics prior to the deposition of amorphous and microcrystalline Si:CI and Si:H were measured by mass spectrometry on real time as function of RF power inputs, pressures and location of the ITO substrate in the PECVD reactor. The mechanisms of deposition on the surface, after the a-Si deposition, the substrate was negatively biased and the etched and sputtered speciess from the surface were measured by on line mass spectrometry.
The degradation mechanisms of the a-Si thin films under illumination on sigle p-i-n and multijunction solar cells will be discussed.
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