STUDY OF LOW TEMPERATURE PLASMA-STIMULATED GROWTH OF YSZ THIN FILMS ON Si SUBSTRATE

Naumov, V.V.; Bochkarev, V.F.; Goryachev, A.A.; Trushin, O.S.

Progress in Plasma Processing of Materials, 1999

ISBN Print: 1-56700-126-2

STUDY OF LOW TEMPERATURE PLASMA-STIMULATED GROWTH OF YSZ THIN FILMS ON Si SUBSTRATE

V.V. Naumov Institute of Microelectronics of Russian Academy of Sciences, Universitetskaya 21, 150000 Yaroslavl, Russia

V.F. Bochkarev Institute of Microelectronics of Russian Academy of Sciences Universitetskaya 21 - 150000 Yaroslavl -Russia

A.A. Goryachev Institute of Microelectronics of Russian Academy of Sciences, Universitetskaya 21, 150000 Yaroslavl, Russia

O.S. Trushin Institute of Microelectronics of Russian Academy of Sciences, Universitetskaya 21, 150000 Yaroslavl, Russia

Аннотация

The growth of yttria-stabilized zirconia (YSZ) films on Si by RF magnetron sputter deposition is studied. New method to control the process of film growth is proposed with use of RF bias on substrate. The structure of as-deposited films is studied as a function of experimental conditions. It has been shown that the optimal choice of RF bias parameters allows to fabricate highly ordered YSZ films with different textures at low temperatures of substrate.

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