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Begell House作者,编辑及审稿者
Begell House作者,编辑及审稿者
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作者
编辑
审稿人
I. P. Storozhenko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077; National University of Pharmacy 53, Pushkinskaya Str., Kharkiv, 61002, Ukraine
Get more info about author from Directory of Specialists
Articles
In
0.4
Ga
0.6
As Gunn Diodes with a
m-n
: InP
1-x
As
x
Cathode
Vol. 57 '2002
-
Telecommunications and Radio Engineering
Modelling the Gunn Diodes Based on Variband Semiconductors
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Operation of Gunn Diode Containing Two InP
0.7
As
0.3
−In
0.4
Ga
0.6
As Active Regions
Vol. 59 '2003
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of the Gann Diodes Based On A
3
B
5
Threefold Semiconductors with Linearly Changing Composition in the Active Zone
Vol. 61 '2004
-
Telecommunications and Radio Engineering
InP
1-
x
(
z
)
As
x
(
z
)
Variband Gunn Diodes with Different Cathode Contacts
Vol. 66 '2007
-
Telecommunications and Radio Engineering
Energy and Frequency Characteristics of GaAs Gunn Diodes with Al
x
Ga
1−
x
As and GaP
x
As
1−
x
Cathodes
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Initiation and Drift of the Space-Charge Waves in Devices Based on Variband GaP
x
(
z
)
As
1−
x
(
z
)
with the Intervalley Electron Transport
Vol. 67 '2008
-
Telecommunications and Radio Engineering
Resonant-Tunneling Cathode for a Gunn Diode
Vol. 68 '2009
-
Telecommunications and Radio Engineering
RESONANCE FREQUENCY OF GUNN DIODES ON THE BASIS OF AlGaAs, GaPAs AND GaSbAs GRADED GAP SEMICONDUCTORS
Vol. 70 '2011
-
Telecommunications and Radio Engineering
THE FUNCTION OF NEUTRAL‐IMPURITY AND ALLOYED‐POTENTIAL ELECTRON SCATTERING IN EXCITATION OF SPACE‐CHARGE WAVES IN INTERVALLEY ELECTRON‐TRANSFER DEVICES
Vol. 70 '2011
-
Telecommunications and Radio Engineering
PROSPECTS FOR USING GUNN DIODES BASED ON GaN, AlN AND InN
Vol. 71 '2012
-
Telecommunications and Radio Engineering
GENERATION EFFICIENCY OF RESONANT-TUNNEL BARRIER DIODES IN SANDWICH-TYPE STRUCTURES
Vol. 72 '2013
-
Telecommunications and Radio Engineering
InBN AND GaBN GRADED-GAP GUNN DIODES
Vol. 73 '2014
-
Telecommunications and Radio Engineering
RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS
Vol. 73 '2014
-
Telecommunications and Radio Engineering
AlGaInAs GRADED-GAP GUNN DIODE
Vol. 75 '2016
-
Telecommunications and Radio Engineering
STATIC DOMAIN IN A TRANSFERRED-ELECTRON DEVICE BASED ON GRADED-GAP AlGaAS
Vol. 75 '2016
-
Telecommunications and Radio Engineering
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